PART |
Description |
Maker |
IDT72V01 IDT72V01L25J IDT72V01L35J IDT72V02 IDT72V |
3.3 VOLT CMOS ASYNCHRONOUS FIFO 512 x 9, 1024 x 9, 2048 x 9, 4096 x 9 2K X 9 OTHER FIFO, 25 ns, PQCC32
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Integrated Device Technology, Inc. IDT[Integrated Device Technology]
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7202LA20JG IDT7200L 7201LA20DB 7201LA35J 7201LA20T |
CMOS ASYNCHRONOUS FIFO CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9 and 1,024 x 9 First-In/First-Out dual-port memory
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Integrated Device Technology List of Unclassifed Manufacturers Integrated Device Technolog... Integrated Device Techn... List of Unclassifed Man...
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IDT72V36104 IDT72V36103 IDT72V3694 IDT72V3693 |
3.3 VOLT CMOS SyncBiFIFO? 3.3 VOLT CMOS SyncFIFO?
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IDT
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74LCX646RM13TR 74LCX646 74LCX646M1R 74LCX646TTR |
LOW VOLT. CMOS OCTAL BUS TRANSCEIVER/REGISTER WITH 5 VOLT TOLERANT INPUTS AND OUTPUTS(3-STATE)
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STMICROELECTRONICS[STMicroelectronics]
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74LCX646 74LCX646RM13TR 74LCX64604 |
LOW VOLT. CMOS OCTAL BUS TRANSCEIVER/REGISTER WITH 5 VOLT TOLERANT INPUTS AND OUTPUTS(3-STATE)
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STMicroelectronics
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N01L63W3AB25I N01L63W3AB25IT N01L63W3A |
1 Mb Ultra-Low Power Asynchronous CMOS SRAM 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ? 16 bit
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ON Semiconductor
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IDT72V201L20J IDT72V201L20JI IDT72V211L20J IDT72V2 |
512 x 9 SyncFIFO, 3.3V 3.3 VOLT CMOS SyncFIFO 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 3.3 VOLT CMOS SyncFIFO⑩ 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 GT 11C 11#16 SKT RECP BOX RM 3.3 VOLT CMOS SyncFIFO 256 x 9/ 512 x 9/ 1/024 x 9/ 2/048 x 9/ 4/096 x 9 and 8/192 x 9 3.3 VOLT CMOS SyncFIFO256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 3.3伏的CMOS SyncFIFO56 × 912 × 9,024 × 9,048 × 9,096 × 9,192 × 9 GT 6C 3#4 3#16 SKT RECP WALL 1K X 9 OTHER FIFO, 6.5 ns, PQCC32 GT 7C 7#16S PIN RECP 3.3 VOLT CMOS SyncFIFO??256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 GT 8C 8#16 SKT RECP WALL GT 3C 3#16S PIN RECP WALL GT 4C 4#12 PIN PLUG 3.3 VOLT CMOS SyncFIFO?256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
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IDT[Integrated Device Technology] Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Techn...
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AM29LV002 AM29LV002B-90RECB AM29LV002B-120FCB AM29 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only/ Boot Sector Flash Memory Half Bridge Driver, LO Out of Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位56亩8位).0伏的CMOS只,引导扇区闪存 Connector 连接 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 100 ns, PDSO40 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO40 MB 18C 18#20 PIN RECP 256K X 8 FLASH 3V PROM, 120 ns, PDSO40 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位256亩8位).0伏的CMOS只,引导扇区闪存 256K X 8 FLASH 3V PROM, 90 ns, PDSO40
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AMD Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
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AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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AMD29F010B AM29F010B-90PI AMD29F010B-45EE AMD29F01 |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory 20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package; A IRLML2402 with Tape and Reel Packaging 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位28亩8位)的CMOS 5.0伏只,统一部门快闪记忆 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位128亩8位)的CMOS 5.0伏只,统一部门快闪记忆
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Advanced Micro Devices, Inc.
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